SK hynix Launches NVMe Enterprise SSD utilizing 2nd Generation 3D NAND23 Juni 2017
Seoul, April 13, 2016 – SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced it has launched NVMe(Non-Volatile Memory Express) 1TB(Terabyte) enterprise SSD based on its own 2nd generation 3D NAND Flash and in-house controller. This SSD has been recently qualified by a major customer of the Company for server use.
This cutting-edge 3D NAND based NVMe SSD supports PCIe Gen 3x4 lanes, providing higher bandwidth and lower latency to process data far quicker than SATA SSDs. Presented in a M.2 form factor, the product is ideal for open cloud servers, being in compliance with OCS(Open Cloud Server) v2.1 specifications as well as applicable to Intel Broadwell(Intel® Xeon® Processor E5-2673) CPU systems. Plus, since most of the datacenter servers presented lately by OCP(Open Compute Project) have installed PCIe NVMe SSDs, the importance of NVMe SSD in the market is expected to increase gradually.
The SSD operates at 1800MB/s(Megabytes per second) and 770MB/s of sequential read/write speed and runs random read/write speed at 160,000 IOPS(Input/Output operations per second) and 30,000 IOPS.
“SK hynix is pleased to expect open cloud servers to enhance their performances with this advanced NVMe SSD” said Vice President SooHwan Choi, the Head of NAND Product Planning Office.
THE FACT OF US ?
THE FACT OF US ? Buy SK hynix factory original memory modules. The same modules specified at Dell, HP, IBM and other OEMs. All the modules are compliant to specifications and performance in Intel® platform systems.
New waves of ICT trends are approaching. Internet of Things, Cloud Computing, and Big Data Analytics
New waves of ICT trends are approaching. Internet of Things, Cloud Computing, and Big Data Analytics are new trends
SK Hynix Inc. Introduces Industry’s Highest 72-Layer 3D NAND Flash
Seoul, April 10, 2017 – SK Hynix Inc. today introduced the industry’s first 72-Layer 256Gb(Gigabit) 3D(Three-Dimensional) NAND Flash based on its TLC(Triple-Level Cell) arrays and own technologies. The Company stacks 1.5 times more cells for the 72-Layer 3D NAND than it does for the 48-Layer 3D which is already in mass production. A single 256Gb NAND Flash chip can represent 32GB(Gigabytes) storage.
the world’s first highest density of 8GB(Gigabytes) LPDDR4X mobile DRAM
Seoul, January 9, 2017 – SK Hynix Inc. (or ‘the Company’, www.skhynix.com) announced it has launched the world’s first highest density of 8GB(Gigabytes) LPDDR4X mobile DRAM using its state of the art dual channel 16Gb chips. SK Hynix has been planning to mass produce the product for upcoming flagship smartphones equipped with 8GB mobile DRAM. 8GB is the highest density in the LPDDR4X standard, which has 20% of superiority in power efficiency to current LPDDR4.
Introducing 20nm class of 4GB DDR4 SDRAM
SK hynix is introducing 20nm class DDR4 SDRAM and its memory module family, best suited for all server segments such as enterprise, high-end and scale-out server, as well as high-end desktop.
SK Hynix Developed the World’s First Highest Density 128GB DDR4 Module
Seoul, April 7, 2014 – SK Hynix Inc. (or ‘the Company’, www.skhynix.com) announced that it has developed the world’s first highest density of 128GB(Gigabytes) module based on 8Gb(Gigabit) DDR4 using its advanced 20nm class technology.